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Proceedings Paper

C-QWIPs for material characterization
Author(s): Kwong-Kit Choi; ChenJune Chen; Daniel C. Tsui
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Paper Abstract

In this paper, we discuss the utilities of corrugated quantum well infrared photodetectors (C-QWIPs) in detector material characterization. By measuring the detector responsivity as a function of corrugation period, several important detector parameters, such as the absorption coefficient (alpha) of parallel propagating light and the energy resolved photoconductive gain g, can be directly deduced. For the QWIP material presented, (alpha) at the peak was found to be 0.21 micrometer-1 under the usual operating condition. This value of (alpha) corresponds to an absorption length of 4.9 micrometer. Instead of being a constant, the value of g also varies significantly across the excitation spectrum, and the peak value is larger than the noise gain at large bias. Our results show that the present characterization technique is capable of providing accurate and detailed information on the intrinsic properties of QWIP materials under actual operating conditions. It is extremely useful in detector optimization. In addition, we also show that the performance of C-QWIPs can be further improved by etching an additional vertical trench at the center of each corrugation.

Paper Details

Date Published: 17 July 2000
PDF: 11 pages
Proc. SPIE 4028, Infrared Detectors and Focal Plane Arrays VI, (17 July 2000); doi: 10.1117/12.391742
Show Author Affiliations
Kwong-Kit Choi, Army Research Lab. (United States)
ChenJune Chen, Princeton Univ. (United States)
Daniel C. Tsui, Princeton Univ. (United States)


Published in SPIE Proceedings Vol. 4028:
Infrared Detectors and Focal Plane Arrays VI
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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