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Proceedings Paper

Comparison of infrared detection mechanisms in thermal-emissive vs. photoemissive silicon Schottky barrier arrays
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Paper Abstract

Infrared imaging based on photoemission in metal- silicide/silicon Schottky barrier arrays is a mature technology that is currently employed in both military and commercial applications. Metal-silicide/silicon Schottky diodes can also be employed in uncooled bolometer arrays. The bolometer detection mechanism is thermionic emission in the Schottky barrier. Schottky bolometer array technology is expected to have both performance and production advantages, when compared with current uncooled sensor technology. In this paper, we compare the physical mechanisms involved in the two Schottky barrier based infrared sensors. We will also present a simplified model for the noise equivalent temperature of each technology.

Paper Details

Date Published: 17 July 2000
PDF: 12 pages
Proc. SPIE 4028, Infrared Detectors and Focal Plane Arrays VI, (17 July 2000); doi: 10.1117/12.391721
Show Author Affiliations
Freeman D. Shepherd, Solid State Scientific Corp. (United States)
James E. Murguia, Solid State Scientific Corp. (United States)


Published in SPIE Proceedings Vol. 4028:
Infrared Detectors and Focal Plane Arrays VI
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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