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Proceedings Paper

Characteristics around oxygen and silicon K absorption edges of a charge-coupled device
Author(s): Kouji Mori; Makoto Shouho; Haruyoshi Katayama; Shunji Kitamoto; Hiroshi Tsunemi; Kiyoshi Hayashida; Emi Miyata; Motoari Ohta; Takayoshi Kohmura; Katsuji Koyama; Mark W. Bautz; Richard F. Foster; Steven E. Kissel
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Paper Abstract

We measure various spectral response characteristics around the oxygen and silicon K absorption edges of a Charge- Coupled Device X-ray detector used in the X-ray Imaging Spectrometer developed for the ASTRO-E mission. We have evaluated X-ray Absorption Fine Structure (XAFS) around oxygen K edge in detail. A strong absorption peak of 45% is confirmed just above the oxygen K edge and an oscillatory structure follows whose amplitude decreases from 20% at the edge to less than 1% at 0.9 keV. We also show XAFS and discuss on a change of the response function around the silicon K edge. The discontinuity of the signal pulse height at the silicon K edge is less than 1.8 eV. We determine the thickness of silicon, silicon dioxide, and silicon nitride in the dead layer using the depth of the absorption edge.

Paper Details

Date Published: 18 July 2000
PDF: 9 pages
Proc. SPIE 4012, X-Ray Optics, Instruments, and Missions III, (18 July 2000); doi: 10.1117/12.391590
Show Author Affiliations
Kouji Mori, Osaka Univ. (Japan)
Makoto Shouho, Osaka Univ. (Japan)
Haruyoshi Katayama, Osaka Univ. (Japan)
Shunji Kitamoto, Osaka Univ. and Japan Science and Technology Corp. (Japan)
Hiroshi Tsunemi, Osaka Univ. and Japan Science and Technology Corp. (Japan)
Kiyoshi Hayashida, Osaka Univ. and Japan Science and Technology Corp. (Japan)
Emi Miyata, Osaka Univ. and Japan Science and Technology Corp. (Japan)
Motoari Ohta, Osaka Univ. (Japan)
Takayoshi Kohmura, Osaka Univ. (Japan)
Katsuji Koyama, Japan Science and Technology Corp. and Kyoto Univ. (Japan)
Mark W. Bautz, Massachusetts Institute of Technology (United States)
Richard F. Foster, Massachusetts Institute of Technology (United States)
Steven E. Kissel, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 4012:
X-Ray Optics, Instruments, and Missions III
Joachim E. Truemper; Bernd Aschenbach, Editor(s)

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