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Proceedings Paper

DEPMOS arrays for x-ray imaging
Author(s): Gerhard Lutz; Rainer H. Richter; Lothar Strueder
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Paper Abstract

For future x-ray satellite missions and other applications we propose a novel sensor which is based on the `DEPleted Field Effect Transistor (DEPFET)'. MOS-type DEPFETs (DEPMOS) are employed in prototype designs of pixel detectors ready for production. The device operated on a fully depleted silicon wafer allows an internal charge amplification directly above the position where the signal conversion takes place. A very low gate capacitance of the DEPMOS transistor leads to low noise amplification. In contrast to CCDs neither transfer loss nor `out of time events' can occur in a DEPFET-array. Fast imaging and low power consumption can be achieved by a row by row selection mode. The signal charge stored in a potential minimum below the transistor channel can be read out non destructively and repeatedly. By shifting the charge between two neighboring DEPMOS amplifiers the repeated signal readout leads to significant noise reduction. Concept, design and device simulations are presented and consequences of the expected properties for applications in x-ray imaging are discussed.

Paper Details

Date Published: 18 July 2000
PDF: 8 pages
Proc. SPIE 4012, X-Ray Optics, Instruments, and Missions III, (18 July 2000); doi: 10.1117/12.391560
Show Author Affiliations
Gerhard Lutz, Max-Planck-Institut fuer Physik (Germany)
Rainer H. Richter, Max-Planck-Institut fuer Physik (Germany)
Lothar Strueder, Max-Planck-Institut fuer extraterrestrische Physik (Germany)

Published in SPIE Proceedings Vol. 4012:
X-Ray Optics, Instruments, and Missions III
Joachim E. Truemper; Bernd Aschenbach, Editor(s)

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