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Proceedings Paper

Effect of excited-state transitions on the threshold characteristics of a quantum dot laser
Author(s): Levon V. Asryan; Marius Grundmann; Nikolai N. Ledentsov; Oliver Stier; Robert A. Suris; Dieter Bimberg
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Paper Abstract

Theoretical study of threshold characteristics of a quantum dot (QD) laser in the presence of excited-state transitions is given. The effect of microscopic parameters (degeneracy factor and overlap integral for a transition) on the gain is discussed. An analytical equation for the gain spectrum is derived in an explicit form. Transformation of the gain spectrum with the injection current is analyzed. The threshold current density is calculated as a function of the total losses. The conditions for a smooth or step-like change in the lasing wavelength with the losses are formulated. Threshold characteristics of a laser based on self-assembled pyramidal InAs QDs in GaAs matrix are simulated. A small overlap integral for transitions in such QDs (and hence large spontaneous radiative lifetime) is shown to be a main possible reason for a low value of the maximum single-layer modal gain of the respective structure which is deficient to attain lasing at moderately short (several hundreds of micrometers) cavity lengths.

Paper Details

Date Published: 14 July 2000
PDF: 12 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391491
Show Author Affiliations
Levon V. Asryan, Technische Univ. Berlin (Germany) and A.F. Ioffe Physical-Technical Institute (United States)
Marius Grundmann, Technische Univ. Berlin (Germany)
Nikolai N. Ledentsov, Technische Univ. Berlin (Germany)
Oliver Stier, Technische Univ. Berlin (Germany)
Robert A. Suris, A.F. Ioffe Physical-Technical Institute (Russia)
Dieter Bimberg, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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