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Proceedings Paper

Photodetection mechanism in p-channel pseudomorphic MODFET
Author(s): Jung Il Lee; Hwe-Jong Kim; Dong Myong Kim; Jacques Zimmermann
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Paper Abstract

The use of microwave semiconductor devices as photodetectors or optically controlled circuit elements have attracted growing interest. We have systematically characterized the optical response of p-channel pseudomorphic MODFET as a function of the drain voltage, gate voltage, and optical power of the illumination. Physical mechanisms responsible for the variation of the device characteristics due to the optical illumination are discussed and analytic models are developed for strong non-linear behavior of the threshold voltage and the photoresponsivity with the optical power of the illumination.

Paper Details

Date Published: 14 July 2000
PDF: 9 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391482
Show Author Affiliations
Jung Il Lee, Korea Institute of Science and Technology (South Korea)
Hwe-Jong Kim, Korea Institute of Science and Technology (South Korea)
Dong Myong Kim, Kookmin Univ. (South Korea)
Jacques Zimmermann, Ecole Nationale Superieure d'Electronique et de Radioelectricite de Grenoble (France)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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