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Proceedings Paper

Second harmonic generation from the Si/SiO2 interface
Author(s): Steven T. Cundiff; Tara Michele Fortier
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Paper Abstract

Optical second harmonic generation is very sensitive to surfaces or interfaces if the bulk material is inversion symmetric. We present the results of second harmonic studies of the interface between silicon and silicon dioxide. Previous results have shown that the technique is sensitive to roughness at this interface. To develop a further understanding of why roughness influences second harmonic generation, we investigate the dependence of the second harmonic on the photon energy of the incident pulses. Measurements are made on a series of samples, with varying vicinal angles, in order to determine what role miscut and step edges play.

Paper Details

Date Published: 14 July 2000
PDF: 12 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391472
Show Author Affiliations
Steven T. Cundiff, Univ. of Colorado/Boulder (USA) and National Institute of Standards and Technology (United States)
Tara Michele Fortier, Univ. of Colorado/Boulder (USA) and National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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