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Proceedings Paper

Effect of nitrogen on the band structure of III-N-V alloys
Author(s): Wei Shan; Wladek Walukiewicz; K. M. Yu; Joel W. Ager; Eugene E. Haller; John F. Geisz; Daniel J. Friedman; J. M. Olson; Sarah R. Kurtz; H. P. Xin; Charles W. Tu
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Paper Abstract

Incorporation of a few percent of nitrogen into conventional III-V compounds to form III-N-V alloys such as GaNAs and GaNP leads to a large reduction of the fundamental band gap. We show experimentally and theoretically that the effect originates from an anti-crossing interaction between the extended conduction-band states and a narrow resonant band formed by localized N states. The interaction significantly alters the electronic band structure by splitting the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy.

Paper Details

Date Published: 14 July 2000
PDF: 11 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391460
Show Author Affiliations
Wei Shan, Lawrence Berkeley National Lab. (United States)
Wladek Walukiewicz, Lawrence Berkeley National Lab. (United States)
K. M. Yu, Lawrence Berkeley National Lab. (United States)
Joel W. Ager, Lawrence Berkeley National Lab. (United States)
Eugene E. Haller, Lawrence Berkeley National Lab. (USA) and Univ. of California/Berkeley (United States)
John F. Geisz, National Renewable Energy Lab. (United States)
Daniel J. Friedman, National Renewable Energy Lab. (United States)
J. M. Olson, National Renewable Energy Lab. (United States)
Sarah R. Kurtz, National Renewable Energy Lab. (United States)
H. P. Xin, Univ. of California/San Diego (United States)
Charles W. Tu, Univ. of California/San Diego (United States)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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