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Proceedings Paper

Circuit modeling of carrier transport effects in SCHQW bistable lasers
Author(s): M. Ganesh Madhan; P. R. Vaya; N. Gunasekaran
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Paper Abstract

An electrical equivalent circuit for quantum well absorptive bistable laser diode has been developed from rate equations. The carrier transport effects are studied by simulating the circuit for dc sweep and transient conditions using circuit simulator Pspice. The hysterisis width is found to vary nonlinearly for lower values of transport time and linearly for higher values. The turn on delay increases with transport time in transient operation.

Paper Details

Date Published: 14 July 2000
PDF: 7 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391455
Show Author Affiliations
M. Ganesh Madhan, Anna Univ. (India)
P. R. Vaya, Indian Institute of Technology/Madras (India)
N. Gunasekaran, Anna Univ. (India)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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