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Proceedings Paper

Time-resolved visualization of electron flow in semiconductor quantum confined structures using carrier drag effect
Author(s): Yasushi Nagamune
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Paper Abstract

This work describes a new technique to visualize the electron flow in semiconductor quantum structures using carrier drag effect. The visualization method is based on ultra-short laser pulse excitation and time-resolved micro-photoluminescence measurements at low temperatures. Here, time-integrated and time-resolved images corresponding to the electron flow in modulation-doped n-type GaAs/AlGaAs quantum wells and edge- wires are demonstrated. It is found that the relaxation time of exciton-electron scattering and exciton-lattice scattering are very long and that the relaxation time in the edge-wires are longer than those in the wells, resulting in high exciton mobility in the edge wires.

Paper Details

Date Published: 14 July 2000
PDF: 6 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391453
Show Author Affiliations
Yasushi Nagamune, Electrotechnical Lab. (Japan)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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