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Proceedings Paper

Optimization of high-power broad-area semiconductor lasers
Author(s): Sheng-Hui Yang; Xiaoguang He; Manoj Kanskar; Stewart Wilson; Alexander Ovtchinnikov; Steven H. Macomber; Shantanu Gupta
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Paper Abstract

Design issues relating to high-power broad-area semiconductor lasers are reviewed. Device optimization is performed using a phenomenological model. This model provides a simple means of predicting the laser performance and assessing a high-power laser design. Emphases are placed on parameters that impact the power conversion efficiency,junction temperature, optical intensity, and near field uniformity.

Paper Details

Date Published: 14 July 2000
PDF: 10 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391441
Show Author Affiliations
Sheng-Hui Yang, Opto Power Corp. (United States)
Xiaoguang He, Opto Power Corp. (United States)
Manoj Kanskar, Opto Power Corp. (United States)
Stewart Wilson, Opto Power Corp. (United States)
Alexander Ovtchinnikov, Opto Power Corp. (United States)
Steven H. Macomber, Opto Power Corp. (United States)
Shantanu Gupta, Opto Power Corp. (United States)

Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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