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Proceedings Paper

Design of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation
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Paper Abstract

Three-dimensional electric-thermal-optical numerical simulator is developed and applied to model group-III-nitride-based intracavity-contacted vertical-cavity surface-emitting lasers (VCSELs) with InGaN multi-quantum-well active region. The optical model based on the effective frequency method is combined with electrical-thermal simulator using the control volume method. Isothermal (pulsed regime imitation) and CW modes of operation are calculated over a range of voltages, covering sub-threshold spontaneous emission and lasing emission. Effects of current crowding at the active-region periphery are examined, and in particular an impact on mode profiles of spatial hole burning superimposed on nonuniform gain distribution is studied. In order to reduce the current crowding and provide more uniform gain distribution within the active region, a semitransparent p-side contact design is proposed.

Paper Details

Date Published: 14 July 2000
PDF: 16 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391440
Show Author Affiliations
Marek Osinski, CHTM/Univ. of New Mexico (United States)
Vladimir A. Smagley, CHTM/Univ. of New Mexico (United States)
Chunsheng Fu, CHTM/Univ. of New Mexico (United States)
Gennady A. Smolyakov, CHTM/Univ. of New Mexico (United States)
Petr Georgievich Eliseev, CHTM/Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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