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Proceedings Paper

Recent advances in type-II interband cascade lasers
Author(s): Rui Q. Yang; John L. Bradshaw; John D. Bruno; John T. Pham; Donald E. Wortman
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Paper Abstract

Interband cascade (IC) lasers are a new class of mid-IR light sources, which take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we describe recent advances in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.6 - 4 micrometer; these semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Low threshold current densities (e.g., approximately 56 A/cm2 at 80 K) and power efficiency exceeding 9% were observed from a mesa-stripe laser in cw operation. Also, these lasers were able to operate at temperatures up to 250 K in pulsed mode and to 120 K in cw mode. We observed from several devices at temperatures above 80 K a slope efficiency of approximately 800 mW/A per facet, corresponding to a differential external quantum efficiency of approximately 500%. Peak optical output powers exceeding 4 W per facet were observed from several type-II IC laser at 80 K.

Paper Details

Date Published: 14 July 2000
PDF: 10 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391437
Show Author Affiliations
Rui Q. Yang, Army Research Lab. (United States)
John L. Bradshaw, Army Research Lab. (United States)
John D. Bruno, Army Research Lab. (United States)
John T. Pham, Army Research Lab. (United States)
Donald E. Wortman, Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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