Share Email Print
cover

Proceedings Paper

Modeling of the static behavior in two InGaAsP laterally coupled semiconductor diode lasers
Author(s): Manuel Leones; Horacio Lamela; Jean-Pierre Vilcot; A. Idjeri
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper presents our initial work on high speed laterally coupled semiconductor diode lasers, where the structures to be studied will be two laterally coupled semiconductor diode lasers are expected to increase the modulation bandwidth by using the principles of coupling. We will show a study of the modeling used to find the static and spatial behavior of theses devices, obtaining the near and far field profiles and light power-current characteristic. Our primary goal will be to present the static and spatial behavior of the two InGaAsP laterally coupled semiconductor diode lasers using the effective-index method and Beam Propagation Method (BPM). Our results provide the static evolution of the current density profile, carrier density in the active layer and effective index shape at different injection current levels of a specific InGaAsP structure operating at 1.3 micrometer.

Paper Details

Date Published: 14 July 2000
PDF: 9 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391435
Show Author Affiliations
Manuel Leones, Univ. Carlos III de Madrid (Spain)
Horacio Lamela, Univ. Carlos III de Madrid (Spain)
Jean-Pierre Vilcot, Institut d'Electronique et Microelectronique du Nord (France)
A. Idjeri, Institut d'Electronique et Microelectronique du Nord (France)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

© SPIE. Terms of Use
Back to Top