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Proceedings Paper

Modeling combined effects of carrier injection, photon dynamics, and heating in strained multiple-quantum-well lasers
Author(s): Uwe Bandelow; Herbert Gajewski; Hans-Christoph Kaiser
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Paper Abstract

Our simulations on InP-based edge-emitting RW-lasers have been essentially based on the drift-diffusion approach. The model comprises a self-consistent description of the electronic properties and the optical field under modifications caused by heating processes. Calculations on the device performance have been done by means of the semiconductor device simulation package TESCA with energy transport equation. The quantum confined carriers are described by a (8X8) kp-Hamiltonian, self-consistently coupled to the Poisson equation and exchange-correlation potentials to give a guess for Coulomb effects. Using the package KPLIB for band structure calculations, modifications of the optical gain, caused by the presence of the strained multi quantum wells, have been simulated and will be discussed.

Paper Details

Date Published: 14 July 2000
PDF: 10 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391433
Show Author Affiliations
Uwe Bandelow, Weierstrass-Institute for Applied Analysis and Stochastics (Germany)
Herbert Gajewski, Weierstrass-Institute for Applied Analysis and Stochastics (Germany)
Hans-Christoph Kaiser, Weierstrass-Institute for Applied Analysis and Stochastics (Germany)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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