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Proceedings Paper

Combined effects of semiconductor gain dynamics, spin dynamics, and thermal shift in polarization selection in VCSELs
Author(s): Maxi San Miguel; Salvador Balle; Josep Mulet; Claudio R. Mirasso; E. Tolkachova; Jorge R. Tredicce
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Paper Abstract

We discuss mechanisms of polarization switching (PS) in Vertical Cavity Surface Emitting Lasers (VCSELs) within a mesoscopic approach based on an explicit form of a frequency- dependent complex susceptibility of the QW semi-conductor material. Cavity anisotropies, spin carrier dynamics and thermal shift of the gain curve are also taken into account in this framework. For large birefringence we find a PS due to thermal shift. For small birefringence we find a different PS, from the high-gain to the low-gain polarization state, that occurs at constant temperature. We characterize polarization partition noise in terms of power spectra. Transverse effects for PS in gain guided VCSELs are also considered.

Paper Details

Date Published: 14 July 2000
PDF: 10 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391426
Show Author Affiliations
Maxi San Miguel, Instituto Mediterraneo de Estudios Avanzados/Univ. de les Illes Balears (Spain)
Salvador Balle, Instituto Mediterraneo de Estudios Avanzados/Univ. de les Illes Balears (Spain)
Josep Mulet, Instituto Mediterraneo de Estudios Avanzados/Univ. de les Illes Balears (Spain)
Claudio R. Mirasso, Univ. de les Illes Balears (Spain)
E. Tolkachova, Institut Nonlineaire de Nice-Sophia Antipolis (Spain)
Jorge R. Tredicce, Institut Nonlineaire de Nice-Sophia Antipolis (France)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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