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Proceedings Paper

Cavity solitons in semiconductor devices
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Paper Abstract

Cavity solitons appear as bright spots in the transverse intensity profile. They are similar to spatial solitons, but arise in dissipative systems. Here we consider a broad area vertical cavity resonator, driven by an external coherent field, at room temperature. The active material is constituted either by bulk GaAs, or by a Multiple Quantum Well GaAs/AlGaAs structure (MQW). A general model valid for both configurations is presented and a set of nonlinear dynamical equations is derived. The linear stability analysis of the homogeneous steady states is performed in a general form, holding for the two cases. Then, the nonlinear susceptibilities are specified: in the bulk case, we basically work in the free-carrier approximation, with some phenomenological corrections, such as the Urbach tail and the band-gap renormalization. For the bulk case, some numerical results concerning spatial pattern formation and cavity solitons are given. In the MQW case, on the contrary, we derive a full many-body theory, with the Coulomb enhancement treated in the Pade approximation.

Paper Details

Date Published: 14 July 2000
PDF: 12 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391425
Show Author Affiliations
Massimo Brambilla, INFM and Politecnico di Bari (Italy)
Luigi A. Lugiato, INFM and Univ. dell'Insubria (Italy)
Tommaso Maggipinto, INFM and Politecnico di Bari (Italy)
Lorenzo Spinelli, INFM and Univ. dell'Insubria (Italy)
Giovanna Tissoni, INFM and Univ. dell'Insubria (Italy)

Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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