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Proceedings Paper

Analysis of the mechanisms for impaired high-temperature high-speed performance of 1.3-um InGaAsP lasers
Author(s): Aeneas B. Massara; Kevin A. Williams; Jennifer L. Yong; Alexander I. Onischenko; Judy M. Rorison; Richard V. Penty; Ian H. White; Andrew Galbraith; Paul Crump; Mark Silver
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Paper Abstract

In this paper, the static and dynamic performance of multi quantum-well (MQW) 1.3 micrometer InGaAsP Fabry Perot lasers is assessed experimentally and theoretically to identify the mechanisms responsible for impaired high speed performance at elevated temperature. Initially, threshold currents and spontaneous emission spectra are characterized for a range of temperatures from room temperature to 85 degrees Celsius to indicate a significant increase in non-radiative current contributions. Preliminary estimates are made for the contributions of leakage and Auger recombination rates, found from the dependence of integrated spontaneous emission with carrier density. Drift-diffusion modeling is found to accurately predict the trend of threshold currents over temperature. Using gain modeling good agreement is found between the measured and predicted integrated spontaneous emission intensity. Gain measurements at 85 degrees Celsius indicate a reduction in RIN frequency to 63% of the 25 degree Celsius value which matches well with experimental small signal performance.

Paper Details

Date Published: 14 July 2000
PDF: 10 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391423
Show Author Affiliations
Aeneas B. Massara, Univ. of Bristol (United Kingdom)
Kevin A. Williams, Univ. of Bristol (United Kingdom)
Jennifer L. Yong, Univ. of Bristol (United Kingdom)
Alexander I. Onischenko, Univ. of Bristol (United Kingdom)
Judy M. Rorison, Univ. of Bristol (United Kingdom)
Richard V. Penty, Univ. of Bristol (United Kingdom)
Ian H. White, Univ. of Bristol (United Kingdom)
Andrew Galbraith, Agilent Technologies (United Kingdom)
Paul Crump, Agilent Technologies (United States)
Mark Silver, Agilent Technologies (United Kingdom)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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