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Proceedings Paper

Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers
Author(s): Yongsang Cho; Woo-Young Choi
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Paper Abstract

Polarization sensitivity of quantum-well structures with delta-strained layers is investigated by numerical analysis. The effects of delta-strained layers on optical gains are very sensitive to the location and the number of the layers. Among the various structures investigated, the quantum well with two delta-strained layers has the least polarization sensitivity for wide wavelength and injected carrier density ranges.

Paper Details

Date Published: 14 July 2000
PDF: 9 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391419
Show Author Affiliations
Yongsang Cho, Yonsei Univ. (South Korea)
Woo-Young Choi, Yonsei Univ. (South Korea)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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