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Proceedings Paper

Theoretical analysis of AlGaAs/GaAs quantum well waveguide defined by impurity-free vacancy diffusion
Author(s): Dennis H. W. Lau; Joseph Micallef
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Paper Abstract

The AlGaAs/GaAs multi-quantum well waveguide defined by impurity free vacancy diffusion is analyzed using an advanced model. The waveguiding properties such as the modal propagation constant, full width half maximum of the guided field profile are found by the semi-vectorial wave equation. By choosing various parameters like the cap width, the cap thickness, the quantum well thickness and the operating wavelength properly, single-mode operation with strong optical confinement can be achieved. This method of defining guided channels is attractive in the view of integrating photonic devices with a tuneable wavelength operation.

Paper Details

Date Published: 14 July 2000
PDF: 14 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391414
Show Author Affiliations
Dennis H. W. Lau, Univ. of Hong Kong (Hong Kong)
Joseph Micallef, Univ. of Malta (Malta)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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