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Proceedings Paper

GaInNAs laser gain
Author(s): Weng W. Chow; Eric D. Jones; Normand A. Modine; Steven R. Kurtz; Andrew A. Allerman
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Paper Abstract

The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

Paper Details

Date Published: 14 July 2000
PDF: 5 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391408
Show Author Affiliations
Weng W. Chow, Sandia National Labs. (United States)
Eric D. Jones, Sandia National Labs. (United States)
Normand A. Modine, Sandia National Labs. (United States)
Steven R. Kurtz, Sandia National Labs. (United States)
Andrew A. Allerman, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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