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Proceedings Paper

Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells: effect of low-temperature heat treatment in N2
Author(s): Richard J. Potter; Naci Balkan; Michael J. Adams; Paul R. Chalker; Tim B. Joyce; Tim J. Bullough
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Paper Abstract

We present the results of our studies concerning temperature dependence of photoluminescence (PL) in GaxIn1-xAs1- yNy/GaAs single quantum wells. Our results at low temperatures indicate the presence of a high density of compositional and/or structural disorder and hence poor PL efficiency, common to as-grown GaInAsN material. We show, however, that the optical quality of GaInAsN can be improved while achieving a red shift in the spectra. This is unlike the results obtained by rapid thermal annealing (RTA) or conventional annealing, which are widely employed as post- growth treatment techniques, where any increase in the PL intensity is almost always accompanied by an undesired blue- shift.

Paper Details

Date Published: 14 July 2000
PDF: 10 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391403
Show Author Affiliations
Richard J. Potter, Univ. of Essex (United Kingdom)
Naci Balkan, Univ. of Essex (United Kingdom)
Michael J. Adams, Univ. of Essex (United Kingdom)
Paul R. Chalker, Univ. of Liverpool (United Kingdom)
Tim B. Joyce, Univ. of Liverpool (United Kingdom)
Tim J. Bullough, Univ. of Liverpool (United Kingdom)

Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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