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Proceedings Paper

Modeling of gallium nitride optoelectronic devices
Author(s): Curt A. Flory; Ghulam Hasnain
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Paper Abstract

The nature of our work in the area of research and development of nitride-based LEDs and laser diodes requires a fast modular tool for numerical simulation and analysis. It is required that the modeling tool reflects the primary physical processes of current injection, quantum well bound state dynamics, quantum well capture, radiative and non-radiative transitions. The model must also have the flexibility to incorporate secondary physical effects, such as induced piezoelectric strain fields due to lattice mismatch. A one-dimensional model with a phenomenological well capture process, similar to that developed by Tessler and Eisenstein, has been implemented. The radiative processes are calculated from first principles, and the material band structures are computed using k (DOT) p theory. The model also features the incorporation of such effects as thermionic emission at heterojunctions, Shockley- Read-Hall recombination, piezoelectric strain fields, and self-consistent calculation of the quantum well bound states with dynamic device operation. The set of equations underlying the model is presented, with particular emphasis on the approximations used to achieve the previously stated goals. A sample structure is analyzed, and representative physical parameters are plotted. Finally, as an example of the modeled secondary physical processes, results showing the effects of incorporating strain-induced piezoelectric fields due to lattice mismatch are given.

Paper Details

Date Published: 14 July 2000
PDF: 15 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391401
Show Author Affiliations
Curt A. Flory, Agilent Labs. (United States)
Ghulam Hasnain, Agilent Labs. (United States)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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