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Proceedings Paper

Wannier-Stark localization of a strongly coupled asymmetric double-well GaAs/AlAs superlattice
Author(s): Kenji Kawashima; Takeshi Matsumoto; Kiyotoku Arima; Takahiro Ohsumi; Takamitsu Nogami; Kazuo Satoh; Kenzo Fujiwara
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Paper Abstract

A novel new type of superlattice (SL) structure which consists of strongly coupled asymmetric double-well (ADW) in one period have been investigated to introduce a new degree of freedom for the device funtionality. The GaAs/A1As ADS-SL contained in a p-i-n diode structure was grown by molecular beam epitaxy, and the electroabsorption properties were measured by low temperature photocurrent spectroscopy. It is found that the introduction of the confinement potential asymmetry with respect to electric field will lead to the selectivity of spatially indirect Stark-ladder transitions associated with two different types of the localized hole states, thus providing a new way of modulating the oscillator strengths. Assignment of the possible optical transitions from the miniband to the Stark-ladder regimes as a function of field strength is elucidated in detail by transfer matrix calculations.

Paper Details

Date Published: 30 June 2000
PDF: 6 pages
Proc. SPIE 4097, Complex Mediums, (30 June 2000); doi: 10.1117/12.390590
Show Author Affiliations
Kenji Kawashima, Kyushu Institute of Technology (Japan)
Takeshi Matsumoto, Kyushu Institute of Technology (Japan)
Kiyotoku Arima, Kyushu Institute of Technology (Japan)
Takahiro Ohsumi, Kyushu Institute of Technology (Japan)
Takamitsu Nogami, Kyushu Institute of Technology (Japan)
Kazuo Satoh, Kyushu Institute of Technology (Japan)
Kenzo Fujiwara, Kyushu Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 4097:
Complex Mediums
Akhlesh Lakhtakia; Werner S. Weiglhofer; Russell F. Messier, Editor(s)

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