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Proceedings Paper

Novel CMOS photosensor with a gate-body tied NMOSFET structure
Author(s): Youn-Jae Kook; Jae-Hun Jeong; Young-June Park; Hong-Shick Min
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Paper Abstract

A novel CMOS photosensor with a gate-body tied NMOSFET structure realized in the triple is well presented. The photocurrent is amplified by the lateral and vertical BJT action, which results in two different output photocurrents, which can be used for different applications within a pixel. The lateral action results in the drain current with a higher sensitivity at low light intensity. And the vertical action results in the collector current with uniform responsivity over wider range of the light intensity. The proposed photosensor in compatible with CMOS circuits.

Paper Details

Date Published: 4 July 2000
PDF: 8 pages
Proc. SPIE 4082, Optical Sensing, Imaging, and Manipulation for Biological and Biomedical Applications, (4 July 2000); doi: 10.1117/12.390543
Show Author Affiliations
Youn-Jae Kook, Seoul National Univ. (South Korea)
Jae-Hun Jeong, Seoul National Univ. (South Korea)
Young-June Park, Seoul National Univ. (South Korea)
Hong-Shick Min, Seoul National Univ. (South Korea)


Published in SPIE Proceedings Vol. 4082:
Optical Sensing, Imaging, and Manipulation for Biological and Biomedical Applications
Robert R. Alfano; Peng Pei Ho; Arthur E. T. Chiou, Editor(s)

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