Share Email Print
cover

Proceedings Paper

Fabrication and characterization of thin ferroelectric interferometers for light modulation
Author(s): Kewen K. Li; Feiling Wang; Jianjun Zheng; Peter L. Pondillo
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A thin ferroelectric interferometer (TFI) structure for light modulating devices is presented. It was fabricated entirely with thin film techniques on sapphire and silicon substrates. The ferroelectric layer in this structure was the lanthanum-modified lead zirconate titanate electrooptic materia, deposited from a chemical precursor solution onto an ITO-coated dielectric mirror stack. Light intensity modulation in both transmission and reflection modes, and phase modulation in the reflection mode were demonstrated. Experimental and simulation data show that TFI devices can be fast switching with a low driving voltage. Variations of the basic TFI structure can be used for phase tunable spatial light modulators and laser beam steering devices. Design principles, fabrication procedure and the preliminary performance of the devices are described.

Paper Details

Date Published: 6 July 2000
PDF: 10 pages
Proc. SPIE 4081, Optical Storage and Optical Information Processing, (6 July 2000); doi: 10.1117/12.390495
Show Author Affiliations
Kewen K. Li, NZ Applied Technologies (United States)
Feiling Wang, NZ Applied Technologies (United States)
Jianjun Zheng, Tufts Univ. (United States)
Peter L. Pondillo, Tufts Univ. (United States)


Published in SPIE Proceedings Vol. 4081:
Optical Storage and Optical Information Processing
Han-Ping D. Shieh; Tomas D. Milster, Editor(s)

© SPIE. Terms of Use
Back to Top