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Proceedings Paper

EUV nanolithography: sub-50-nm L/S
Author(s): Wai-Kin Li; Harun H. Solak; Franco Cerrina
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Paper Abstract

Extreme Ultra Violet Lithography (EUVL, (lambda) equals 13.4 nm) is one of the next generation lithography technologies developed for patterns smaller than 70 nm feature size. In our system, EUV light is obtained from an undulator in an electron storage ring. This provides a temporally and spatially coherent light source for Extreme Ultra Violet Interferometric lithography (EUV-IL). The patterning system uses a Lloyd mirror interferometer. Using EUV-IL to print high-resolution pattern allows us to study resist characteristic in the EUV. Previously we demonstrated 19 nmL/S fringe pattern by using IL technique with EUV light. In this paper, we will report our progress on development of sub-50 nm dense line/space patterns using EUV-IL, and the transferring patterns into 0.12 micrometer Poly-Si.

Paper Details

Date Published: 21 July 2000
PDF: 5 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390120
Show Author Affiliations
Wai-Kin Li, Univ. of Wisconsin/Madison (United States)
Harun H. Solak, Univ. of Wisconsin/Madison (Switzerland)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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