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Proceedings Paper

Beam-monitoring system using microapertures for electron-beam lithography
Author(s): Jun Takamatsu; Naoharu Shimomura; Hitoshi Sunaoshi; Kiyoshi Hattori; Munehiro Ogasawara; Tetsuro Nakasugi
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Paper Abstract

A new beam-monitoring system for electron-beam lithography is proposed, which can be used for the variably shaped beam (VSB) method, the character projection (CP) method and the electron- beam mask (EB mask) projection method. The system is composed of micro-apertures and a detector placed below the micro- aperture, which is installed at a focal plane of a mask writer. The micro-apertures are formed on a 1-micrometer-thick Si film on which two 200-nm-thick W layers are deposited. A shaped beam is scanning over the micro-aperture, and the electrons that pass through the micro-aperture are directly detected with the detector, so that the two-dimensional shape and size of the beam are measured. The contrast and the signal-to-noise ratio obtained by this system are greatly superior to those obtained by the conventional mark-scanning method.

Paper Details

Date Published: 21 July 2000
PDF: 9 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390105
Show Author Affiliations
Jun Takamatsu, Toshiba Corp. (Japan)
Naoharu Shimomura, Toshiba Corp. (Japan)
Hitoshi Sunaoshi, Toshiba Corp. (Japan)
Kiyoshi Hattori, Toshiba Corp. (Japan)
Munehiro Ogasawara, Toshiba Corp. (Japan)
Tetsuro Nakasugi, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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