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Proceedings Paper

Lithographic performance and optimization of chemically amplified single-layer resists for EUV lithography
Author(s): Takeo Watanabe; Hiroo Kinoshita; Atsushi Miyafuji; Shigeo Irie; Shigeru Shirayone; Shigeyasu Mori; Ei Yano; Hideo Hada; Katsumi Ohmori; Hiroshi Komano
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Paper Abstract

The single layer chemically amplified resists are investigated for the extreme ultra-violet lithography. From the results of the sensitivity curve, the positive-tone resist of DP603 and the negative-tone resist of SAL601 have high sensitivities and high gamma values to the EUV exposure wavelength. Furthermore, by the optimization of both the dosage and the wafer focusing position, we succeed in replicating 0.056-micrometer-resist- pattern width on the exposure-field size of 10 mm X 1 mm on an 8-inches-diameter wafer. We confirm the resolution capability of the three-aspherical mirror imaging system that has been developed by the Himeji Institute of Technology.

Paper Details

Date Published: 21 July 2000
PDF: 8 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390100
Show Author Affiliations
Takeo Watanabe, Himeji Institute of Technology (Japan)
Hiroo Kinoshita, Himeji Institute of Technology (Japan)
Atsushi Miyafuji, Himeji Institute of Technology (Japan)
Shigeo Irie, Association of Super-Advanced Electronics Technologies (Japan)
Shigeru Shirayone, Association of Super-Advanced Electronics Technologies (Japan)
Shigeyasu Mori, Association of Super-Advanced Electronics Technologies (Japan)
Ei Yano, Association of Super-Advanced Electronics Technologies (Japan)
Hideo Hada, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Katsumi Ohmori, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hiroshi Komano, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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