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Proceedings Paper

EUV mask fabrication with Cr absorber
Author(s): Pawitter J. S. Mangat; Scott Daniel Hector; Stewart Rose; Gregory Frank Cardinale; Edita Tejnil; Alan R. Stivers
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Paper Abstract

In an attempt to narrow the choice for an absorber used in EUV masks, different materials are being evaluated. These materials need to meet the absorber requirements of EUV absorbance, emissivity, inspection, and repair, to name a few. We have fabricated masks using Cr absorbers. The absorber stack consists of a repair buffer of SiON and a conductive etch stop of Cr sandwiched between the SiON repair buffer film and the Mo/Si multilayer mirror deposited on a Si wafer. However, to increase the process latitude, the Cr etch stop needs to be removed from the stack, in particular for mask repair. The absorber layer was patterned using commercial DUV resist and the pattern was transferred using reactive ion etching (RIE) with halogen-based gases. Completed masks exhibited negligible shift in the centroid wavelength of reflectivity and less than 2% loss in peak reflectivity due to mask patterning. Completed masks were exposed at Sandia National Laboratories' 10X EUV exposure system and equal lines and spaces down to 80 nm were successfully printed. The masks were also imaged in a microscope with 248 nm wavelength, and the focused ion beam repair selectivity to the buffer layer (SiON) was established. The paper summarizes the mask fabrication process, EUV printability, mask repair, inspection and emissivity for EUVL masks with Cr absorber.

Paper Details

Date Published: 21 July 2000
PDF: 7 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390099
Show Author Affiliations
Pawitter J. S. Mangat, Motorola (United States)
Scott Daniel Hector, Motorola (United States)
Stewart Rose, Motorola (United States)
Gregory Frank Cardinale, Sandia National Labs. (United States)
Edita Tejnil, Intel Corp. (United States)
Alan R. Stivers, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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