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Proceedings Paper

Pattern transfer distortions in IPL and EPL masks with pattern density gradients
Author(s): Gary A. Frisque; Edward G. Lovell; Roxann L. Engelstad
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Paper Abstract

Stringent error budgets for Next Generation Lithography masks require accurate pattern placement. Therefore, predictions of distortions induced during mask fabrication and usage are needed to optimize processing and exposure conditions. This paper focuses on the in-plane distortions resulting from pattern transfer during the fabrication of ion-beam projection lithography and electron-beam projection lithography stencil masks.

Paper Details

Date Published: 21 July 2000
PDF: 10 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390096
Show Author Affiliations
Gary A. Frisque, Univ. of Wisconsin/Madison (United States)
Edward G. Lovell, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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