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Proceedings Paper

Sub-10-nm electron-beam lithography with sub-10-nm overlay accuracy
Author(s): Kenji Yamazaki; Mohammad S.M. Saifullah; Hideo Namatsu; Kenji Kurihara
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Paper Abstract

Stable sub-10-nm lithography was achieved using a 100-kV electron-beam nanolithography system. 8-nm-wide lines were formed using a high resolution spin-coatable Al2O3 resist, and even at the corner of a wide field of several- hundred micrometers square, the lines were about 10-nm wide. The overlay accuracies in mean + 2 (sigma) were about 5 nm at the field center and sub-10 nm at the field boundaries. The high stability of exposure and the high overlay accuracy were obtained not only by the high- performance lens and the high acceleration voltage but by high stability of the stage and the beam. A method of repeating a nanolithography with high overlay accuracy and substrate etching was developed. It allows us to form sub-10-nm-wide standing lines within the field, using a highly sensitive positive-tone resist. These technologies are promising to apply to high performance nanodevices like integrated single- electron devices.

Paper Details

Date Published: 21 July 2000
PDF: 9 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390084
Show Author Affiliations
Kenji Yamazaki, NTT Basic Research Labs. (Japan)
Mohammad S.M. Saifullah, NTT Basic Research Labs. (United Kingdom)
Hideo Namatsu, NTT Basic Research Labs. (Japan)
Kenji Kurihara, NTT Basic Research Labs. (Japan)


Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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