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Proceedings Paper

EUV engineering test stand
Author(s): Daniel A. Tichenor; Glenn D. Kubiak; William C. Replogle; Leonard E. Klebanoff; John B. Wronosky; Layton C. Hale; Henry N. Chapman; John S. Taylor; James A. Folta; Claude Montcalm; Russell M. Hudyma; Kenneth A. Goldberg; Patrick P. Naulleau
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Paper Abstract

The Engineering Test Stand (ETS) is an EUV laboratory lithography tool. The purpose of the ETS is to demonstrate EUV full-field imaging and provide data required to support production-tool development. The ETS is configured to separate the imaging system and stages from the illumination system. Environmental conditions can be controlled independently in the two modules to maximize EUV throughput and environmental control. A source of 13.4 nm radiation is provided by a laser plasma source in which a YAG laser beam is focused onto a xenon-cluster target. A condenser system, comprised of multilayer-coated mirrors and grazing-incidence mirrors, collects the EUV radiation and directs it onto a reflecting reticle. A four-mirror, ring-field optical system, having a numerical aperture of 0.1, projects a 4x-reduction image onto the wafer plane. This design corresponds to a resolution of 70 nm at a k1 of 0.52. The ETS is designed to produce full- field images in step-and-scan mode using vacuum-compatible, one-dimension-long-travel magnetically levitated stages for both reticle and wafer. Reticle protection is incorporated into the ETS design. This paper provides a system overview of the ETS design and specifications.

Paper Details

Date Published: 21 July 2000
PDF: 22 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390083
Show Author Affiliations
Daniel A. Tichenor, Sandia National Labs. (United States)
Glenn D. Kubiak, Sandia National Labs. (United States)
William C. Replogle, Sandia National Labs. (United States)
Leonard E. Klebanoff, Sandia National Labs. (United States)
John B. Wronosky, Sandia National Labs. (United States)
Layton C. Hale, Lawrence Livermore National Lab. (United States)
Henry N. Chapman, Lawrence Livermore National Lab. (United States)
John S. Taylor, Lawrence Livermore National Lab. (United States)
James A. Folta, Lawrence Livermore National Lab. (United States)
Claude Montcalm, Lawrence Livermore National Lab. (United States)
Russell M. Hudyma, Lawrence Livermore National Labs. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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