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Proceedings Paper

Stress engineering of SOI silicon stencil masks by boron doping concentration
Author(s): Artur Degen; Jens Voigt; Martin Kratzenberg; Feng Shi; Joerg Butschke; Hans Loeschner; Rainer Kaesmaier; Albrecht Ehrmann; Ivo W. Rangelow
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Paper Abstract

Ion Projection Lithography (IPL) is a most promising candidate for next generation IC technology. A critical aspect of IPL is the development of stencil masks with proper stress control. Thus, precise stress measurement of stencil mask membranes is mandatory. The work presented in this paper is based on the well known bulging method. The Silicon lattice contraction by boron doping was investigated experimentally on SOI 150 mm masks with 3 micrometer thick membranes of 126 mm diameter. The measured Si membrane stress vs. boron doping was compared with theoretical models. This comparison shows that a three dimensional model of stress formation is not appropriate and thus the dependence of stress on boron doping concentration better follows linear model.

Paper Details

Date Published: 21 July 2000
PDF: 10 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390076
Show Author Affiliations
Artur Degen, Univ. of Kassel (Germany)
Jens Voigt, Univ. of Kassel (Germany)
Martin Kratzenberg, Univ. of Kassel (Germany)
Feng Shi, Univ. of Kassel (Germany)
Joerg Butschke, Institut fuer Mikroelektronik Chips (Germany)
Hans Loeschner, Ionen Mikrofabrikations Systeme GmbH (Austria)
Rainer Kaesmaier, Infineon Technologies AG (Germany)
Albrecht Ehrmann, Infineon Technologies AG (Germany)
Ivo W. Rangelow, Univ. of Kassel (Germany)


Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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