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Proceedings Paper

Edge roughness evaluation method for quantifying at-size beam blur in electron-beam lithography
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Paper Abstract

At-size beam blur at any given pattern size of an electron beam (EB) direct writer, HL800D, was quantified using the new edge roughness evaluation (ERE) method to optimize the electron-optical system. We characterized the two-dimensional beam-blur dependence on the electron deflection length of the EB direct writer. The results indicate that the beam blur ranged from 45 nm to 56 nm in a deflection field 2520 micrometer square. The new ERE method is based on the experimental finding that line edge roughness of a resist pattern is inversely proportional to the slope of the Gaussian-distributed quasi-beam-profile (QBP) proposed in this paper. The QBP includes effects of the beam blur, electron forward scattering, acid diffusion in chemically amplified resist (CAR), the development process, and aperture mask quality. The application the ERE method to investigating the beam-blur fluctuation demonstrates the validity of the ERE method in characterizing the electron-optical column conditions of EB projections such as SCALPEL and PREVAIL.

Paper Details

Date Published: 21 July 2000
PDF: 8 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390066
Show Author Affiliations
Masaki Yoshizawa, Sony Corp. (Japan)
Shigeru Moriya, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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