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Proceedings Paper

Image size control in next generation lithography masks
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Paper Abstract

Mask image size variation is a major contributor to the total image size budget. To understand the source and contribution of various errors, we have characterized the image size variations on next generation lithography masks. CD control experiments initiated on x-ray masks are now being extended to other NGL technologies through the application of similar patterns, measurement strategy, and error budget partitioning. A systematic measurement methodology has been used to partition the variations into known components. Long-range variations have been found to be the dominant error, and in x- ray masks, are typically membrane edge effects and cross-mask bow. The membrane effects have been shown to be primarily driven by temperature differences during the post-expose bake (PEB) of the chemically amplified resist. To further understand the source of these temperature variations, the x- ray and SCALPEL mask PEB have been modeled through a finite- difference model. Key contributors to controlling bake temperature uniformity have been identified.

Paper Details

Date Published: 21 July 2000
PDF: 10 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390062
Show Author Affiliations
Michael J. Lercel, IBM Microelectronics Div. (United States)
Christopher Magg, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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