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Proceedings Paper

Optimization of DUV chemically amplified resist platforms for SCALPEL e-beam exposure
Author(s): Leonidas E. Ocola; Myrtle I. Blakey; Paul A. Orphanos; Wai-Yi Li; Anthony E. Novembre; Robert L. Brainard; Joseph F. Mackevich; Gary N. Taylor
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Paper Abstract

Optimization of phenolic chemically amplified resist platforms has lead to the development of new resists, capable of high throughput SCALPEL exposure. A positive resist, XP9947A, has exhibited 100 nm and 80 nm dense line resolution with good sensitivity and dose latitude. The influence of DUV absorption and 100 KV e-beam absorption to the optimization process is discussed. The nature of 100 KV e-beam absorption enables a greater freedom of resist design than encountered for DUV resists.

Paper Details

Date Published: 21 July 2000
PDF: 10 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390055
Show Author Affiliations
Leonidas E. Ocola, Lucent Technologies/Bell Labs. (United States)
Myrtle I. Blakey, Lucent Technologies/Bell Labs. (United States)
Paul A. Orphanos, Lucent Technologies/Bell Labs. (United States)
Wai-Yi Li, Lucent Technologies/Bell Labs. (United States)
Anthony E. Novembre, Lucent Technologies/Bell Labs. (United States)
Robert L. Brainard, Shipley Co., Inc. (United States)
Joseph F. Mackevich, Shipley Co., Inc. (United States)
Gary N. Taylor, Shipley Co., Inc. (United States)

Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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