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Proceedings Paper

Extreme ultraviolet light generation based on laser-produced plasmas (LPP) and gas-discharge-based pinch plasmas: a comparison of different concepts
Author(s): Guido Schriever; Manfred Rahe; Willi Neff; Klaus Bergmann; Rainer Lebert; Hans Lauth; Dirk Basting
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Paper Abstract

Extreme ultraviolet (EUV) lithography tools will need a debris free source with a collectable radiation power of about 40 W to fulfill the prerequisites for an economical wafer throughput up to 80 wafer/hour with a wafer size of 300 mm in diameter. Laser produced plasmas and gas discharge based plasmas are under investigation by several working groups as EUV-sources for this purpose. In this paper the achieved results for the different sources are discussed regarding their emission characteristics in comparison to the demands of EUV lithography (EUVL).

Paper Details

Date Published: 21 July 2000
PDF: 7 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390051
Show Author Affiliations
Guido Schriever, Lambda Physik GmbH (Germany)
Manfred Rahe, Lambda Physik GmbH (Germany)
Willi Neff, Fraunhofer-Institut fuer Lasertechnik (Germany)
Klaus Bergmann, Fraunhofer-Institut fuer Lasertechnik (Germany)
Rainer Lebert, Lehrstuhl fuer Lasertechnik/RWTH Aachen (Germany)
Hans Lauth, JENOPTIK Laser Optik Systeme GmbH (Germany)
Dirk Basting, Lambda Physik, Inc. (United States)


Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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