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Proceedings Paper

Xenon liquid-jet laser plasma source for EUV lithography
Author(s): Bjoern A. M. Hansson; Magnus Berglund; Oscar E. Hemberg; Hans M. Hertz
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Paper Abstract

We describe a laser-plasma source based on a cryogenic xenon liquid-jet target suitable for extreme ultraviolet (EUV) projection lithography. Recent improvements in the stability of the xenon jet allows efficient laser-plasma operation several millimeters away from the nozzle orifice. We present the first preliminary laser-to-EUV conversion efficiencies, although under non-optimized conditions, for the source.

Paper Details

Date Published: 21 July 2000
PDF: 4 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390049
Show Author Affiliations
Bjoern A. M. Hansson, Royal Institute of Technology (Sweden)
Magnus Berglund, Royal Institute of Technology (Sweden)
Oscar E. Hemberg, Royal Institute of Technology (Sweden)
Hans M. Hertz, Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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