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Proceedings Paper

Luminescence of the InGaN/GaN blue light-emitting diodes
Author(s): J. K. Sheu; Ting-Wei Yeh; GouChung Chi; M. J. Jou
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Paper Abstract

InGaN/GaN double heterostructure and multiple quantum wells (MQW) light-emitting diodes were grown by metalorganic vapor phase epitaxy. Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibit a blue-shift phenomenon when increasing the injection current and laser power, respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectrically-induced quantum-confined Stark effect and a blue-shift mechanism of band-filling and charge screening effects.

Paper Details

Date Published: 30 June 2000
PDF: 8 pages
Proc. SPIE 4079, Display Technologies III, (30 June 2000); doi: 10.1117/12.389421
Show Author Affiliations
J. K. Sheu, National Central Univ. (Taiwan)
Ting-Wei Yeh, National Central Univ. (Taiwan)
GouChung Chi, National Central Univ. (Taiwan)
M. J. Jou, Epistar Corp. (Taiwan)


Published in SPIE Proceedings Vol. 4079:
Display Technologies III
I-Wei Wu; Heiju Uchiike, Editor(s)

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