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Proceedings Paper

Amorphous-silicon thin film transistor with two-step exposure process
Author(s): Pi-Fu Chen; Jr-Hong Chen; Dou-I Chen; HsixgJu Sung; June-Wei Hwang; I-Min Lu
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Paper Abstract

The two-step-exposure (TSE) technology has been developed in application for combination the active layer with metal II layer. And this TSE technology has been applied in our Reduced-Mask process (five-mask) for cost reduction. The result shows that this amorphous-silicon thin-film transistor with four-photolithography process has great potential in mass production.

Paper Details

Date Published: 30 June 2000
PDF: 4 pages
Proc. SPIE 4079, Display Technologies III, (30 June 2000); doi: 10.1117/12.389409
Show Author Affiliations
Pi-Fu Chen, Industrial Technology Research Institute (Taiwan)
Jr-Hong Chen, Industrial Technology Research Institute (Taiwan)
Dou-I Chen, Industrial Technology Research Institute (Taiwan)
HsixgJu Sung, Industrial Technology Research Institute (Taiwan)
June-Wei Hwang, Industrial Technology Research Institute (Taiwan)
I-Min Lu, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 4079:
Display Technologies III
I-Wei Wu; Heiju Uchiike, Editor(s)

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