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Proceedings Paper

High-performance thin film transistors using Ni silicide for liquid-crystal displays
Author(s): Jin Jang; Jaiil Ryu; Kyu Sik Cho
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Paper Abstract

The Ni-silicide of a sheet resistance of 7 (Omega) /(open square) can be formed at 230 degree(s)C on n+ a-Si:H and thus can be applied to gate and source/drain contacts for high performance TFTs. Because of its low resistance it is possible to make a self-alignment between gate and source/drain, which lead to a coplanar a-Si:H TFT having a low parasitic capacitance between them. The NiSi2 precipitates can be formed on a-Si:H at around 350 degree(s)C and needlelike Si crystallites are grown as a result of the migration of the NiSi2 precipitates though a-Si:H network. Amorphous silicon can be crystallized at 500 degree(s)C in 10 minutes in a modest electric field. The low temperature poly-Si TFT with a field effect mobility of 120 cm2/Vs has been demonstrated using the low temperature poly-Si.

Paper Details

Date Published: 30 June 2000
PDF: 9 pages
Proc. SPIE 4079, Display Technologies III, (30 June 2000); doi: 10.1117/12.389391
Show Author Affiliations
Jin Jang, Kyung Hee Univ. (South Korea)
Jaiil Ryu, Kyung Hee Univ. (South Korea)
Kyu Sik Cho, Kyung Hee Univ. (South Korea)

Published in SPIE Proceedings Vol. 4079:
Display Technologies III
I-Wei Wu; Heiju Uchiike, Editor(s)

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