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Proceedings Paper

Strategy for optimizing random code lithography patterning in 0.18-um generation mask ROM
Author(s): Chih-Ping Chen; Shun-Li Lin; Ta-Hung Yang
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Paper Abstract

Among the non-volatize memory family, Mask ROM is the most cost competed product that wildly adopted in data storage application. The mask ROM based on the 0.18 um technology generation is pushed to production in most of the advanced fabs that use KrF lithography. There are two critical steps in the process flow layer. Most of the existing studies deal with the small geometry poly patterning. The other challenge is to deal with random code implant layer. However, few studies have been done on the related problems.

Paper Details

Date Published: 5 July 2000
PDF: 7 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389089
Show Author Affiliations
Chih-Ping Chen, Macronix (Taiwan)
Shun-Li Lin, Macronix (Taiwan)
Ta-Hung Yang, Macronix (Taiwan)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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