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Proceedings Paper

130-nm KrF lithography for DRAM production with 0.68-NA scanner
Author(s): Eiichi Kawamura; Kouichi Nagai; Hideyuki Kanemitsu; Yasuko Tabata; Soichi Inoue
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Paper Abstract

We have proposed a methodology for 130-nm DRAM patterning. We started by running a simulation to investigate the possibility of 130-nm DRAM production with KrF lithography. We optimized cell array features and isolate lines in the core circuits and peripheral circuits, corresponding to resist performance ((Delta) L). Using a half-tone phase-shift mask, off-axis illumination, and 0.68-NA KrF scanner, we found a high-performance resist of 40-nm (Delta) L that meets the requirement. Then, we screened resist samples using design of experiment. The result was a 40-nm (Delta) L positive resist that has small line edge roughness, a high- contrast resist profile, a small iso-dense bias and a low- blocking level to prevent defects. Finally, we applied this positive resist and OPC-mask to critical layers and achieved a sufficient production margin using a 0.68-NA KrF scanner.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389088
Show Author Affiliations
Eiichi Kawamura, Fujitsu Ltd. (Japan)
Kouichi Nagai, Fujitsu Ltd. (Japan)
Hideyuki Kanemitsu, Fujitsu Ltd. (Japan)
Yasuko Tabata, Fujitsu Ltd. (Japan)
Soichi Inoue, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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