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Proceedings Paper

Across field and across wafer flare: from KrF stepper to ArF scanner
Author(s): Yorick Trouiller; Emmanuelle Luce; Alexandra Barberet; L. Depre; Patrick Schiavone
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Paper Abstract

Flare is known to be responsible for a contrast lost and a process latitude reduction. Another undesirable effect is the flare variation, which induces linewidth variation. For a stepper, this is mainly an intrafield effect. In the same way, the main contribution of flare variation comes also from the across field flare variation (AFFV). In comparison the contribution to across wafer flare variation is weak. Using a scanner, AFFV and flare mean for an isolated field has been reduced by a factor of two. Unfortunately, stray light variation across the wafer has increased, but AWFV and flare mean with adjacent field has not dropped significantly. In this paper, the averaged flare, AFFV and AWFV will be compared on a 248 nm stepper ASM/300, a scanner ASM/500 and 193 nm scanner ASM/900. Different parameters such as field size, bottom anti reflective coating, adjacent field and exposure at the edge of the wafer will be analyzed on mean flare value, AFFV and AWFV. An averaged flare for isolate field and AFFV improvement has been observed for the scanner. However, flare impact needs to be carefully considered because AWFV and flare mean with adjacent field is still not negligible. Flare value seems also to drop significantly with the wavelength change, but more experiments need to be done on this non mature technology.

Paper Details

Date Published: 5 July 2000
PDF: 12 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389084
Show Author Affiliations
Yorick Trouiller, CEA-LETI (France)
Emmanuelle Luce, STMicroelectronics (France)
Alexandra Barberet, CEA-LETI (France)
L. Depre, ASML (Netherlands)
Patrick Schiavone, CNRS (France)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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