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Proceedings Paper

Factors affecting pitch bias in lithography simulation
Author(s): Stewart A. Robertson; Edward K. Pavelchek; Catherine I. Swible-Keane; John F. Bohland; Michael T. Reilly
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Paper Abstract

The ability of a commercial lithography simulator to accurately predict the pitch dependent print bias of a conventional i-line resist is investigated, under conventional and annular illumination schemes for two critical geometries. The influence of the simulator settings and resist modeling parameters on the observed bias are determined. The result reveal that the simulation predictions are qualitatively, but not quantitatively, reflective of experimental data and are remarkably insensitive to changes in either the simulator settings or the parameters used to describe the resist process.

Paper Details

Date Published: 5 July 2000
PDF: 15 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389067
Show Author Affiliations
Stewart A. Robertson, Shipley Co., Inc. (United States)
Edward K. Pavelchek, Shipley Co., Inc. (United States)
Catherine I. Swible-Keane, Shipley Co., Inc. (United States)
John F. Bohland, Shipley Co., Inc. (United States)
Michael T. Reilly, Shipley Co., Inc. (United States)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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