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Proceedings Paper

New pattern generation system based on i-line stepper: photomask repeater
Author(s): Suigen Kyoh; Soichi Inoue; Iwao Higashikawa; Ichiro Mori; Katsuya Okumura; Nobuyuki Irie; Koji Muramatsu; Nobutaka Magome
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Paper Abstract

New pattern generation system, Photomask Repeater, based on i-line stepper has been developed. This system can transfer device patterns from master masks onto a photomask plate with 22mm field size. To print a chip larger than the 22mm field, stitching technology has been developed. Critical dimension error in the region where shots are stitched is the key issue of this technology. Quantification of critical dimension deviation induced by shot misplacement was carried out by calculation. Introducing exposure dose gradation, it was reduced less than 1.5nm. Form measurements of real exposed mask this technique proved to be able to stitch shots seamlessly. Major two specifications, pattern placement accuracy and critical dimension uniformity, were evaluated. Both specifications required for 150nm photomask were fully satisfied. Availability of the photomask repeater to memory device and system on chip is discussed.

Paper Details

Date Published: 5 July 2000
PDF: 11 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389056
Show Author Affiliations
Suigen Kyoh, Toshiba Corp. (Japan)
Soichi Inoue, Toshiba Corp. (Japan)
Iwao Higashikawa, Toshiba Corp. (Japan)
Ichiro Mori, Toshiba Corp. (Japan)
Katsuya Okumura, Toshiba Corp. (Japan)
Nobuyuki Irie, Nikon Corp. (Japan)
Koji Muramatsu, Nikon Corp. (Japan)
Nobutaka Magome, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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