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Proceedings Paper

Effect of real masks on wafer patterning
Author(s): Chris A. Spence; Ramkumar Subramanian; David Teng; Ernesto Gallardo
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Paper Abstract

In this paper we present results comparing design, mask images and wafer images for a variety of features. By extracting the outline of the actual mask pattern we can use simulations to evaluate the relative contribution of mask pattern we effects to the overall wafer proximity effects. Although the actual patterns on the mask were measurable different from the design it was found that the differences between the aerial images simulated using mask images and the original design were quite similar. As a result of this study we propose that comparison of aerial images between design and actual mask patterns be used as the best method of characterizing OPC reticles.

Paper Details

Date Published: 5 July 2000
PDF: 9 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389052
Show Author Affiliations
Chris A. Spence, Advanced Micro Devices, Inc. (United States)
Ramkumar Subramanian, Advanced Micro Devices, Inc. (United States)
David Teng, Advanced Micro Devices, Inc. (United States)
Ernesto Gallardo, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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