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Proceedings Paper

Advances in 193-nm lithography tools
Author(s): Daniel R. Cote; David Ahouse; Daniel N. Galburt; Hilary G. Harrold; Justin Kreuzer; Mike Nelson; Mark L. Oskotsky; Geoffrey O'Connor; Harry Sewell; David M. Williamson; John D. Zimmerman; Richard Zimmerman
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Paper Abstract

The never ending drive for faster and denser ICS has reached a staggering pace is attributable to the economics of the semiconductor industry and competition among chip manufacturers. This quest may be approached in different ways. A common approach is to continue to push the 248nm wavelength lithographic tools. This paper reviews the status of 193nm lithography with respect to its production worthiness, capability and extendibility when compared to 248nm systems. Key issues such as cost of ownership and process maturity are discussed. Analytical results, system analyses and recent lithographic results are presented. Conclusions are offered with respect to the logical timing of the insertion of 193nm lithography tools into semiconductor manufacturing.

Paper Details

Date Published: 5 July 2000
PDF: 9 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389043
Show Author Affiliations
Daniel R. Cote, SVG Lithography Systems, Inc. (United States)
David Ahouse, SVG Lithography Systems, Inc. (United States)
Daniel N. Galburt, SVG Lithography Systems, Inc. (United States)
Hilary G. Harrold, SVG Lithography Systems, Inc. (United States)
Justin Kreuzer, SVG Lithography Systems, Inc. (United States)
Mike Nelson, SVG Lithography Systems, Inc. (United States)
Mark L. Oskotsky, SVG Lithography Systems, Inc. (United States)
Geoffrey O'Connor, SVG Lithography Systems, Inc. (United States)
Harry Sewell, SVG Lithography Systems, Inc. (United States)
David M. Williamson, SVG Lithography Systems, Inc. (United States)
John D. Zimmerman, SVG Lithography Systems, Inc. (United States)
Richard Zimmerman, SVG Lithography Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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