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Proceedings Paper

Status of ArF lithography for the 130-nm technology node
Author(s): Kurt G. Ronse; Geert Vandenberghe; Patrick Jaenen; Christie Delvaux; Diziana Vangoidsenhoven; Frieda Van Roey; Ingrid Pollers; Mireille Maenhoudt; Anne-Marie Goethals; Ivan K.A. Pollentier; Bert Vleeming; Koen van Ingen Schenau; Barbra Heskamp; Guy Davies; Jo Finders; Ardavan Niroomand
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Paper Abstract

Lithographers are preparing their processes for the 130nm node. About one year ago, first generation full field ArF step and scan systems have been introduced in a number of fabs. These systems have lenses with numerical apertures in the order of 0.6. At the same time, 0.7 NA KrF step and scan systems have been introduced as well. Also last year, KrF resists were shown to be much more mature than ArF resists.

Paper Details

Date Published: 5 July 2000
PDF: 13 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389029
Show Author Affiliations
Kurt G. Ronse, IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)
Patrick Jaenen, IMEC (Belgium)
Christie Delvaux, IMEC (Belgium)
Diziana Vangoidsenhoven, IMEC (Belgium)
Frieda Van Roey, IMEC (Belgium)
Ingrid Pollers, IMEC (Belgium)
Mireille Maenhoudt, IMEC (Belgium)
Anne-Marie Goethals, IMEC (Belgium)
Ivan K.A. Pollentier, IMEC (Belgium)
Bert Vleeming, ASML (Netherlands)
Koen van Ingen Schenau, ASML (Netherlands)
Barbra Heskamp, ASML (Netherlands)
Guy Davies, ASML (Netherlands)
Jo Finders, ASML (Netherlands)
Ardavan Niroomand, Micron Technology Inc. (United States)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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